Hiroshi Amano (天野 浩, Amano Hiroshi?), nado en Hamamatsu,[1] o 11 de setembro de 1960, é un físico, enxeñeiro e inventor xaponés especializado no eido da tecnoloxía dos semicondutores. Polo seu traballo foi galardoado co Premio Nobel de Física de 2014, xunto con Isamu Akasaki e Shuji Nakamura pola "invención de diodos emisores de luz azuis eficientes permitiron fontes de luz branca brillantes e que aforran enerxía".[2]
Datos rápidos Nome orixinal, Biografía ...
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- Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (1986-02-03). "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer". Applied Physics Letters (AIP Publishing) 48 (5): 353–355. Bibcode:1986ApPhL..48..353A. ISSN 0003-6951. doi:10.1063/1.96549.
- Amano, Hiroshi; Akasaki, Isamu; Kozawa, Takahiro; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Ikeda, Kousuke; Ishii, Yoshikazu (1988). "Electron beam effects on blue luminescence of zinc-doped GaN". Journal of Luminescence (Elsevier BV). 40-41: 121–122. Bibcode:1988JLum...40..121A. ISSN 0022-2313. doi:10.1016/0022-2313(88)90117-2.
- Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa; Akasaki, Isamu (1989-12-20). "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)". Japanese Journal of Applied Physics (Japan Society of Applied Physics) 28 (Part 2, No. 12): L2112–L2114. Bibcode:1989JaJAP..28L2112A. ISSN 0021-4922. doi:10.1143/jjap.28.l2112.
- Murakami, Hiroshi; Asahi, Tsunemori; Amano, Hiroshi; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Akasaki, Isamu (1991). "Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy". Journal of Crystal Growth (Elsevier BV) 115 (1–4): 648–651. Bibcode:1991JCrGr.115..648M. ISSN 0022-0248. doi:10.1016/0022-0248(91)90820-u.
- Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (1991-09-15). "Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures". Japanese Journal of Applied Physics (Japan Society of Applied Physics) 30 (Part 1, No. 9A): 1924–1927. Bibcode:1991JaJAP..30.1924I. ISSN 0021-4922. doi:10.1143/jjap.30.1924.
- I. Akasaki, H. Amano, K. Itoh, N. Koide & K. Manabe, Int. Phys. Conf. Ser. 129, 851 (1992).
- Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (1995-11-01). "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device". Japanese Journal of Applied Physics (Japan Society of Applied Physics) 34 (11B): L1517. ISSN 0021-4922. doi:10.7567/jjap.34.l1517.