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来自维基百科,自由的百科全书
氮化鋁銦鎵的化學式是InGaAlN,是以氮化鎵為基礎的半導體,常用磊晶成長的方式製成,像是有機金屬化學氣相沉積法(MOCVD)、分子束外延(MBE)、脈衝激光沉積(PLD)等方式[1]。此材料用在特別的光電應用中,像是藍光雷射LED及藍光LED等。
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