氮化鋁銦

氮化鋁銦（InAlN）是氮化銦和氮化鋁混合物組成的三五族半導體，用在電子學和光子學設備裏，和廣泛使用的氮化鎵性質類似。氮化鋁銦有大的直接帶隙，在高達1000 °C的溫度下仍可以穩定工作，因此在需要良好穩定性及可靠度中的應用領域上，會特別關注此半導體^[1]，像是太空產業（英語：space industry）^[2]。InAlN的高電子遷移率電晶體（HEMT）因為其晶格可以和氮化鎵配合，可以避免像氮化鋁鎵HEMT的失效原因，因此在此產業中很受到注意。

InAlN的外延長晶是用有機金屬化學氣相沉積法^[3]或分子束外延^[4]，配合其他半導體材料（例如氮化鎵、氮化鋁及其混合物來產生半導體的晶片，之後用作半導體零件中的主動元件。因為氮化鋁和氮化銦的性質差異很大^[5]，最佳成長的狹窄比例區間可能會有污染（形成氮化鋁銦鎵、晶體品質不良^[6]，氮化鋁銦的外延長晶格外困難，至少比氮化鋁鎵要困難。針對氮化鋁鎵最佳化的零件製造技術，需要因為氮化鋁銦的不同材料特性而進行調整^[7]。

參考資料

1. Maier, D.; Alomari, M.; Grandjean, N.; Carlin, J.-F.; Diforte-Poisson, M.-A.; et al. InAlN/GaN HEMTs for Operation in the 1000°C Regime: A First Experiment. IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers (IEEE)). 2012, 33 (7): 985–987. Bibcode:2012IEDL...33..985M. ISSN 0741-3106. S2CID 328833. doi:10.1109/led.2012.2196972.
2. Smith, M D; O』Mahony, D; Vitobello, F; Muschitiello, M; Costantino, A; et al. A comparison of the ⁶⁰Co gamma radiation hardness, breakdown characteristics and the effect of SiN_x capping on InAlN and AlGaN HEMTs for space applications. Semiconductor Science and Technology (IOP Publishing). 2015-12-14, 31 (2): 025008. ISSN 0268-1242. doi:10.1088/0268-1242/31/2/025008.
3. Xue, JunShuai; Hao, Yue; Zhou, XiaoWei; Zhang, JinCheng; Yang, ChuanKai; et al. High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition. Journal of Crystal Growth (Elsevier BV). 2011, 314 (1): 359–364. Bibcode:2011JCrGr.314..359X. ISSN 0022-0248. doi:10.1016/j.jcrysgro.2010.11.157.
4. Higashiwaki, M., et al, (2006), Molecular Beam Epitaxy, 2002 International Conference on, p. 235
5. Smith, Matthew D.; Sadler, Thomas C.; Li, Haoning; Zubialevich, Vitaly Z.; Parbrook, Peter J. The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures. Applied Physics Letters (AIP Publishing). 2013-08-19, 103 (8): 081602. Bibcode:2013ApPhL.103h1602S. ISSN 0003-6951. doi:10.1063/1.4818645. hdl:10468/4280 .
6. Smith, M. D.; Taylor, E.; Sadler, T. C.; Zubialevich, V. Z.; Lorenz, K.; et al. Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD (PDF). Journal of Materials Chemistry C (Royal Society of Chemistry (RSC)). 2014, 2 (29): 5787. ISSN 2050-7526. doi:10.1039/c4tc00480a.
7. Smith, M. D.; O'Mahony, D.; Conroy, M.; Schmidt, M.; Parbrook, P. J. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy. Applied Physics Letters (AIP Publishing). 2015-09-14, 107 (11): 113506. Bibcode:2015ApPhL.107k3506S. ISSN 0003-6951. doi:10.1063/1.4930880.