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化合物 来自维基百科,自由的百科全书
乙酰丙酮銦和乙酰丙酮亞錫可以用常壓化學氣相沉積法製備氧化銦錫薄膜。得到的薄膜是透明的和導電的,厚度約為200 nm。[2]銅銦鎵二硒化物(CIGS)也可以乙酰丙酮銦為原料製備出來。用In(acac)3和硫化氫反應,通過原子層化學氣相沉積(ALCVD),可以合成薄膜CIGS太陽能電池。[3]
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