Zinc nitride

Chemical compound From Wikipedia, the free encyclopedia

Zinc nitride

Zinc nitride (Zn3N2) is an inorganic compound of zinc and nitrogen, usually obtained as (blue)grey crystals. It is a semiconductor. In pure form, it has the anti-bixbyite structure.

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Zinc nitride
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Identifiers
3D model (JSmol)
ECHA InfoCard 100.013.826
EC Number
  • 215-207-3
UNII
  • InChI=1S/2N.3Zn/q2*-1;;;+2
    Key: AKJVMGQSGCSQBU-UHFFFAOYSA-N
  • [N-]=[Zn].[N-]=[Zn].[Zn+2]
Properties
Zn3N2
Molar mass 224.154 g/mol
Appearance blue-gray cubic crystals[1]
Density 6.22 g/cm3, solid[1]
Melting point decomposes 700°C[1]
insoluble, reacts
Structure
Cubic, cI80
Ia-3, No. 206[2]
Hazards
GHS labelling:
GHS07: Exclamation mark
Warning
H315, H319
P264, P280, P302+P352, P305+P351+P338, P321, P332+P313, P337+P313, P362
NFPA 704 (fire diamond)
ThumbHealth 1: Exposure would cause irritation but only minor residual injury. E.g. turpentineFlammability 0: Will not burn. E.g. waterInstability 2: Undergoes violent chemical change at elevated temperatures and pressures, reacts violently with water, or may form explosive mixtures with water. E.g. white phosphorusSpecial hazard W: Reacts with water in an unusual or dangerous manner. E.g. sodium, sulfuric acid
1
0
2
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Chemical properties

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Perspective

Zinc nitride can be obtained by thermally decomposing zincamide (zinc diamine)[3] in an anaerobic environment, at temperatures in excess of 200 °C. The by-product of the reaction is ammonia.[4]

3 Zn(NH2)2 → Zn3N2 + 4 NH3

It can also be formed by heating zinc to 600 °C in a current of ammonia; the by-product is hydrogen gas.[3][5]

3 Zn + 2 NH3 → Zn3N2 + 3 H2

The decomposition of Zinc Nitride into the elements at the same temperature is a competing reaction.[6] At 700 °C Zinc Nitride decomposes.[1] It has also been made by producing an electric discharge between zinc electrodes in a nitrogen atmosphere.[6][7] Thin films have been produced by chemical vapour deposition of Bis(bis(trimethylsilyl)amido]zinc with ammonia gas onto silica or ZnO coated alumina at 275 to 410 °C.[8]

The crystal structure is anti-isomorphous with Manganese(III) oxide. (bixbyite).[2][7] The heat of formation is c. 24 kilocalories (100 kJ) per mol.[7] It is a semiconductor with a reported bandgap of c. 3.2eV,[9] however, a thin zinc nitride film prepared by electrolysis of molten salt mixture containing Li3N with a zinc electrode showed a band-gap of 1.01 eV.[10]

Zinc nitride reacts violently with water to form ammonia and zinc oxide.[3][4]

Zn3N2 + 3 H2O → 3 ZnO + 2 NH3

Zinc nitride reacts with lithium (produced in an electrochemical cell) by insertion. The initial reaction is the irreversible conversion into LiZn in a matrix of beta-Li3N. These products then can be converted reversibly and electrochemically into LiZnN and metallic Zn.[11][12]

See also

References

Further reading

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