Voigt–Thomson law

Voigt–Thomson law describes anisotropic magnetoresistance effect in a thin film strip as a relationship between the electric resistivity and the direction of electric current:^[1]

${\displaystyle \rho (\vartheta )=\rho _{0}+\Delta \rho \cdot cos^{2}\vartheta }$

where:

${\displaystyle \vartheta \ }$ is the angle of direction of current in relation to the direction of magnetic field

${\displaystyle \rho _{0}\ }$ is the initial resistivity

${\displaystyle \Delta \rho \ }$ is the change of resistivity (proportional to MR ratio)

The equation can also be expressed as:^[2]

${\displaystyle \rho (\vartheta )=\rho _{\parallel }\cdot cos^{2}\vartheta +\rho _{\perp }\cdot sin^{2}\vartheta }$

where:

${\displaystyle \rho _{\parallel }\ }$ is the parallel component of resistivity

${\displaystyle \rho _{\perp }\ }$ is the perpendicular component

References

1. Nie, H. B; Xu, S. Y; Li, J; Ong, C. K; Wang, J. P (2002). "Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers". Journal of Applied Physics. 91 (10): 7532–7534. arXiv:cond-mat/0305687. Bibcode:2002JAP....91.7532N. doi:10.1063/1.1447875. S2CID 43762722.
2. Royal Society (Great Britain) (1936). "Proceedings of the Royal Society of London: Mathematical and physical sciences. Series A". Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences. Harrison and Son. ISSN 0962-8444. Retrieved 2015-07-19.