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Indium phosphide

Chemical compound From Wikipedia, the free encyclopedia

Indium phosphide
"InP" redirects here. For other uses, see INP.

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

Quick Facts Names, Identifiers ...
Indium phosphide
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Names
Other names
Indium(III) phosphide
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.040.856
UNII
  • InChI=1S/In.P Y
    Key: GPXJNWSHGFTCBW-UHFFFAOYSA-N Y
  • InChI=1/In.P/rInP/c1-2
    Key: GPXJNWSHGFTCBW-HIYQQWJCAF
  • [In+3].[P-3]
  • [In]#P
Properties
InP
Molar mass 145.792 g/mol
Appearance black cubic crystals[1]
Density 4.81 g/cm3, solid[1]
Melting point 1,062 °C (1,944 °F; 1,335 K)[1]
Solubility slightly soluble in acids
Band gap 1.344 eV (300 K; direct)
Electron mobility 5400 cm2/(V·s) (300 K)
Thermal conductivity 0.68 W/(cm·K) (300 K)
3.1 (infrared);
3.55 (632.8 nm)[2]
Structure
Zinc blende
a = 5.8687 Å [3]
Tetrahedral
Thermochemistry[4]
45.4 J/(mol·K)
59.8 J/(mol·K)
-88.7 kJ/mol
-77.0 kJ/mol
Hazards
Occupational safety and health (OHS/OSH):
Main hazards
 Toxic, hydrolysis to phosphine
Safety data sheet (SDS) External MSDS
Related compounds
Other anions
 Indium nitride
Indium arsenide
Indium antimonide
Other cations
 Aluminium phosphide
Gallium phosphide
Related compounds
 Indium gallium phosphide
Aluminium gallium indium phosphide
Gallium indium arsenide antimonide phosphide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Manufacturing

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Indium phosphide nanocrystalline surface obtained by electrochemical etching and viewed under scanning electron microscope. Artificially colored in image post-processing.

Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.[6]

Applications

Summarize
Perspective

The application fields of InP splits up into three main areas. It is used as the basis for optoelectronic components,[7] high-speed electronics,[8] and photovoltaics[9]

High-speed optoelectronics

InP is used as a substrate for epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors that could operate at 604 GHz.[10]

InP itself has a direct bandgap, making it useful for optoelectronics devices like laser diodes and photonic integrated circuits for the optical telecommunications industry, to enable wavelength-division multiplexing applications.[11] It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

Optical Communications

InP is used in lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550 nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available on optical fibre (about 0.2 dB/km).[12] Further, O-band and C-band wavelengths supported by InP facilitate single-mode operation, reducing effects of intermodal dispersion.

Photovoltaics and optical sensing

InP can be used in photonic integrated circuits that can generate, amplify, control and detect laser light.[13]

Optical sensing applications of InP include

  • Air pollution control by real-time detection of gases (CO, CO2, NOX [or NO + NO2], etc.).
  • Quick verification of traces of toxic substances in gases and liquids, including tap water, or surface contaminations.
  • Spectroscopy for non-destructive control of product, such as food. Researchers of Eindhoven University of Technology and MantiSpectra have already demonstrated the application of an integrated near-infrared spectral sensor for milk.[14] In addition, it has been proven that this technology can also be applied to plastics and illicit drugs.[15]

References

Cited sources

External links

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