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Adrian Mihai Ionescu is a Romanian and Swiss physicist and academic. He is full Professor at the Swiss Federal Institute of Technology in Lausanne (EPFL), where he is founder and director of the Nanoelectronic Devices Laboratory.
Adrian Mihai Ionescu | |
|---|---|
| Nationality | Romanian and Swiss |
| Alma mater | Politehnica University of Bucharest National Polytechnic Institutes (France) |
| Scientific career | |
| Fields | Silicon nanotechnology, Radio Frequency MEMS and NEMS, Small Swing Switches, Modeling and Simulation of Solid-State Electronic Devices |
| Institutions | Swiss Federal Institute of Technology in Lausanne |
He received the B.S./M.S. degree in electronics and telecommunications, and the Ph.D. in microelectronics from the Polytechnic Institute of Bucharest, Romania in 1989 and 1994, respectively. He obtained a second PhD in semiconductor physics from the National Polytechnic Institute of Grenoble, France, in 1997.
He has held staff and/or visiting positions at CEA-Leti, Grenoble, France, LPCS-ENSERG, Grenoble, France and Stanford University, US, in 1998 and 1999. He was a visiting professor at the Tokyo Institute of Technology in 2012 and 2016.[1]
He is the founder and director of the Nanoelectronic Devices Laboratory of EPFL.[1]
He is an IEEE Fellow since 2016 for contributions to the development of novel devices for low power applications,[2] and a member of the Swiss Academy of Engineering Sciences (SATW), from which he received the Outstanding Achievement Award in 2015.[1]
More than 600 of his articles were, as of 2023, published in scientific journals and conference proceedings.[3] He is co-founder and a member of the Board of Directors of Xsensio SA, a start-up developing wearable biosensors.[4]
As director of the Nanoelectronic Devices group from the Swiss Federal Institute of Technology in Lausanne (EPFL), Ionescu is focusing on these particular topics:
Beyond CMOS technology & devices
- Energy efficient digital and analog computation with steep slope switches: tunnel FETs and phase change switches
- Ultra-low power Tunnel FETs for biosensing and gas sensing
More-than-Moore devices & circuits
Non-silicon devices & circuits
- CNT resonators and circuit applications
- CNTs for programmable interconnects
- Graphene reconfigurable devices and quantum capacitors
- 2024 IEEE Cledo Brunetti Award for "leadership and contributions to the field of energy-efficient steep slope devices and technologies".[5]
- IEEE George E. Smith Award 2017.[6]
- Outstanding Achievement Award of Swiss Academy of Technical Sciences in 2015.[1]
- Recipient of the IBM Faculty Award in Engineering in 2013.[7]
- André Blondel Medal 2009: for remarkable contributions to the progress in engineering sciences in the domain of electronics from the Society of Electrical and Electronics Engineering (SEE, Paris), France.[8]
- Annual Award of the Romanian Academy of Technical Sciences, 1994, for contributions to SOI technology.[citation needed]
- Ionescu, Adrian M.; Riel, Heike (16 November 2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. doi:10.1038/nature10679. PMID 22094693.
- Boucart, Kathy; Ionescu, Adrian M. (25 June 2007). "Double-Gate Tunnel FET With High-κ Gate Dielectric". IEEE Transactions on Electron Devices. 54 (7). doi:10.1109/TED.2007.899389.
- Boucart, Kathy; Ionescu, Adrian M. (2007). "Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric". Solid-State Electronics. 51 (11–12): 1500–1507. doi:10.1016/j.sse.2007.09.014.
- Rusu, Alexandru; Salvatore, Giovanni A.; Jiménez, David; Ionescu, Adrian M. (6 December 2010). Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification. 2010 International Electron Devices Meeting. San Francisco, CA, USA: IEEE. pp. 16.3.1–16.3.4. doi:10.1109/IEDM.2010.5703374.
- Sheibani, Shokoofeh; Capua, Luca; Kamaei, Sadegh; Afyouni Akbari, Sayedeh Shirin; Zhang, Junrui; Guerin, Hoel; Ionescu, Adrian M. (19 January 2021). "Extended gate field-effect-transistor for sensing cortisol stress hormone". Communications Materials. 2 (10). doi:10.1038/s43246-020-00114-x. PMC 7815575.
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