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Ronald D. Schrimpf
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Ronald D Schrimpf is an American electrical engineer and scientist. He is the Orrin H. Ingram Chair in Engineering, Electrical Engineering & Computer Science at Vanderbilt University.[1] where his research activities focus on microelectronics and semiconductor devices. He is affiliated with the Radiation Effects and Reliability Group at Vanderbilt University where he works on the effects of radiation on semiconductor devices and integrated circuits. He also serves as the Director of the Institute for Space and Defense Electronics at Vanderbilt. He is best known for his work in the field of ionizing radiation response on Bipolar junction transistor (BJT) and Enhanced Low Dose Rate Sensitivity in BJT.
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Quick Facts Born, Nationality ...
Ronald D. Schrimpf | |
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Born | |
Nationality | U.S |
Alma mater | University of Minnesota |
Known for | Enhanced Low Dose Rate Sensitivity in Bipolar Junction Transistors |
Awards | Fellow of the IEEE Chancellor's Award for Research, Vanderbilt University, 2003 |
Scientific career | |
Fields | Semiconductor Device Physics, Radiation Effects of Semiconductor Devices, Soft error |
Institutions | Vanderbilt University, University of Arizona, Université Montpellier 2 |
Doctoral advisor | R. M. Warner |
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