Indium phosphide
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"InP" redirects here. For other uses, see INP.
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
Quick Facts Names, Identifiers ...
Names | |
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Other names
Indium(III) phosphide | |
Identifiers | |
3D model (JSmol) |
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ChemSpider |
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ECHA InfoCard | 100.040.856 |
PubChem CID |
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UNII | |
CompTox Dashboard (EPA) |
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Properties | |
InP | |
Molar mass | 145.792 g/mol |
Appearance | black cubic crystals[1] |
Density | 4.81 g/cm3, solid[1] |
Melting point | 1,062 °C (1,944 °F; 1,335 K)[1] |
Solubility | slightly soluble in acids |
Band gap | 1.344 eV (300 K; direct) |
Electron mobility | 5400 cm2/(V·s) (300 K) |
Thermal conductivity | 0.68 W/(cm·K) (300 K) |
Refractive index (nD) |
3.1 (infrared); 3.55 (632.8 nm)[2] |
Structure | |
Zinc blende | |
Tetrahedral | |
Thermochemistry[4] | |
Heat capacity (C) |
45.4 J/(mol·K) |
Std molar entropy (S⦵298) |
59.8 J/(mol·K) |
Std enthalpy of formation (ΔfH⦵298) |
-88.7 kJ/mol |
Gibbs free energy (ΔfG⦵) |
-77.0 kJ/mol |
Hazards | |
Occupational safety and health (OHS/OSH): | |
Main hazards |
Toxic, hydrolysis to phosphine |
Safety data sheet (SDS) | External MSDS |
Related compounds | |
Other anions |
Indium nitride Indium arsenide Indium antimonide |
Other cations |
Aluminium phosphide Gallium phosphide |
Related compounds |
Indium gallium phosphide Aluminium gallium indium phosphide Gallium indium arsenide antimonide phosphide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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