Haynes–Shockley experiment
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In semiconductor physics, the Haynes–Shockley experiment was an experiment that demonstrated that diffusion of minority carriers in a semiconductor could result in a current. The experiment was reported in a short paper by Haynes and Shockley in 1948,[1] with a more detailed version published by Shockley, Pearson, and Haynes in 1949.[2][3] The experiment can be used to measure carrier mobility, carrier lifetime, and diffusion coefficient.
In the experiment, a piece of semiconductor gets a pulse of holes, for example, as induced by voltage or a short laser pulse.