![cover image](https://wikiwandv2-19431.kxcdn.com/_next/image?url=https://upload.wikimedia.org/wikipedia/commons/thumb/e/e3/EB_litograph.jpg/640px-EB_litograph.jpg&w=640&q=50)
Electron-beam lithography
Lithographic technique that uses a scanning beam of electrons / From Wikipedia, the free encyclopedia
Dear Wikiwand AI, let's keep it short by simply answering these key questions:
Can you list the top facts and stats about Electron-beam lithography?
Summarize this article for a 10 year old
Electron-beam lithography (often abbreviated as e-beam lithography or EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing).[1] The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.
![Thumb image](http://upload.wikimedia.org/wikipedia/commons/thumb/e/e3/EB_litograph.jpg/640px-EB_litograph.jpg)
The primary advantage of electron-beam lithography is that it can draw custom patterns (direct-write) with sub-10 nm resolution. This form of maskless lithography has high resolution but low throughput, limiting its usage to photomask fabrication, low-volume production of semiconductor devices, and research and development.