Deal–Grove model
Mathematical model of semiconductor oxidation / From Wikipedia, the free encyclopedia
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The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to predict and interpret thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965 by Bruce Deal and Andrew Grove of Fairchild Semiconductor,[1] building on Mohamed M. Atalla's work on silicon surface passivation by thermal oxidation at Bell Labs in the late 1950s.[2] This served as a step in the development of CMOS devices and the fabrication of integrated circuits.