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Silicon nanowire
From Wikipedia, the free encyclopedia
Silicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium-ion batteries, thermoelectrics and sensors. Initial synthesis of SiNWs is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology.[1]
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SiNWs have unique properties that are not seen in bulk (three-dimensional) silicon materials. These properties arise from an unusual quasi one-dimensional electronic structure and are the subject of research across numerous disciplines and applications. The reason that SiNWs are considered one of the most important one-dimensional materials is they could have a function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities.[2] SiNWs are frequently studied towards applications including photovoltaics, nanowire batteries, thermoelectrics and non-volatile memory.[3]