, Anderson, E., Tsu-Jae King,Bokor, J. , Chenming Hu.FinFET-a self-aligned double-gate MOSFET scalable to 20 nm:IEEE Transactions on Electron Devices,2000:2320
_{h}(c_{t})\end{aligned}}} x t ∈ R d {\displaystyle x_{t}\in \mathbb {R} ^{d}} : LSTM的input(輸入) f t ∈ R h {\displaystyle f_{t}\in \mathbb {R} ^{h}} : forget gate(遺忘閥)
Technology)的Y. Tarui, Y. Hayashi和Toshihiro Sekigawa首次提出有自對準閘極(英语:self-alignedgate)的雙擴散MOSFET(DMOS)。1974年時,日本东北大学的西澤潤一發明了用在音頻上的功率MOSFET,很就由山葉公司生產,用在高保真音頻功率擴大器(英语:Audio