5","static/chunks/5405-4135bebeba5601b1.js","7081","static/chunks/7081-55b21226572b22a9.js","9321","static/chunks/9321-b01966c3adc5b93b.js","8230","static/chunks/8230-7f0ec33d72b3d9cf.js","7420","static/chunks/app/(product)/%5Blang%5D/%5Bbucket%5D/%5B...title%5D/page-f2a073f277418dd5.js"],"default"] 52:I[98567,["8173","static/chunks/8173-ded0155fecbcc4f0.js","2623","static/chunks/2623-3c82bddfcccb14b3.js","9363","static/chunks/9363-e94b65482acc91fb.js","2748","static/chunks/2748-9363e137b6102a44.js","3404","static/chunks/3404-1c8e9e2b07dc534e.js","504","static/chunks/504-4f336d1dd4b05698.js","1700","static/chunks/1700-58b86a652b54c0db.js","5405","static/chunks/5405-4135bebeba5601b1.js","7081","static/chunks/7081-55b21226572b22a9.js","9321","static/chunks/9321-b01966c3adc5b93b.js","8230","static/chunks/8230-7f0ec33d72b3d9cf.js","7420","static/chunks/app/(product)/%5Blang%5D/%5Bbucket%5D/%5B...title%5D/page-f2a073f277418dd5.js"],"default"] 4a:T566,

次臨界電流，或稱次臨界漏電流（英語：subthreshold leakage），是金屬氧化物半導體場效電晶體閘極電壓低於電晶體線性導通所需的閾值電壓、處於截止區（或稱次臨界狀態）時，源極和汲極之間的微量漏電流。

參考文獻