次臨界電流，或稱次臨界漏電流（英語：subthreshold leakage），是金屬氧化物半導體場效電晶體閘極電壓低於電晶體線性導通所需的閾值電壓、處於截止區（或稱次臨界狀態）時，源極和汲極之間的微量漏電流。[1]
參考文獻
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