電子遷移率(英語:electron mobility)是固體物理學中用於描述金屬或半導體內部電子,在電場作用下移動快慢程度的物理量。在半導體中,另一個類似的物理量稱為空穴遷移率(hole mobility)。人們常用載流子遷移率(carrier mobility)來指代半導體內部電子和空穴整體的運動快慢。
外部連結
- The minority Carrier Lifetime in silicon wafer (頁面存檔備份,存於網際網路檔案館)
- semiconductor glossary entry for electron mobility (頁面存檔備份,存於網際網路檔案館)
- Resistivity and Mobility Calculator from the BYU Cleanroom
- Online lecture- Mobility (頁面存檔備份,存於網際網路檔案館) from an atomistic point of view
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