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45纳米制程是半导体制造制程的一个水平。自2007年后期，松下电器和英特尔开始大量制造45纳米的芯片产品。[1]
芯片制造厂商使用High-k材料来填充栅极，目的是为了减少漏电。至2007年，IBM和英特尔宣布他们采用了金属栅极解决方案。
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