Narrow-gap semiconductors are semiconducting materials with a magnitude of bandgap that is smaller than 0.7 eV, which corresponds to an infrared absorption cut-off wavelength over 2.5 micron. A more extended definition includes all semiconductors with bandgaps smaller than silicon (1.1 eV).[1][2] Modern terahertz,[3] infrared,[4] and thermographic[5] technologies are all based on this class of semiconductors.

Narrow-gap materials made it possible to realize satellite remote sensing,[6] photonic integrated circuits for telecommunications,[7][8][9] and unmanned vehicle Li-Fi systems,[10] in the regime of Infrared detector and infrared vision.[11][12] They are also the materials basis for terahertz technology, including security surveillance of concealed weapon uncovering,[13][14][15] safe medical and industrial imaging with terahertz tomography,[16][17][18] as well as dielectric wakefield accelerators.[19][20][21] Besides, thermophotovoltaics embedded with narrow-gap semiconductors can potentially use the traditionally wasted portion of solar energy that takes up ~49% of the sun light spectrum.[22][23] Spacecraft, deep ocean instruments, and vacuum physics setups use narrow-gap semiconductors to achieve cryogenic cooling.[24][25]

List of narrow-gap semiconductors

More information Name, Chemical formula ...
Name Chemical formula Groups Band gap (300 K)
Mercury cadmium telluride Hg1−xCdxTe II-VI 0 to 1.5 eV
Mercury zinc telluride Hg1−xZnxTe II-VI 0.15 to 2.25 eV
Lead selenide PbSe IV-VI 0.27 eV
Lead(II) sulfide PbS IV-VI 0.37 eV
Telenium Te VI ~0.3 eV
Lead telluride PbTe IV-VI 0.32 eV
Magnetite Fe3O4 Transition Metal-VI 0.14 eV
Indium arsenide InAs III-V 0.354 eV
Indium antimonide InSb III-V 0.17 eV
Germanium Ge IV 0.67 eV
Gallium antimonide GaSb III-V 0.67 eV
Cadmium arsenide Cd3As2 II-V 0.5 to 0.6 eV
Bismuth telluride Bi2Te3 0.21 eV
Tin telluride SnTe IV-VI 0.18 eV
Tin selenide SnSe IV-VI 0.9 eV
Silver(I) selenide Ag2Se 0.07 eV
Magnesium silicide Mg2Si II-IV 0.79 eV[26]
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References

Further reading

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