File:1-1-1_Pits_from_Aluminum_Alloying.jpg
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Summary
Description1-1-1 Pits from Aluminum Alloying.jpg |
English: The subject of this image is a silicon integrated circuit wafer. At the center of the image is a light triangle. This triangle is a pyramid-shaped area of Al-Si alloy caused by high-temperature processing (450°C annealing) of the wafer after Aluminum deposition and etching. The 1-1-1 orientation of the silicon wafer enables the alloying to descend into the wafer perpendicular to the surface of the wafer. The alloyed area has a different index of refraction than than the other silicon substrate and is highlighted by the Nomarski Differential Interference Contrast microscopy (DIC). Note that the features are visible because of the aluminum had previously been etched away with acid to enable this microscopic analysis. |
Date | |
Source | Own work |
Author | Richstraka |
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503,616 byte
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2,161 pixel
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 22:23, 27 September 2009 | 2,161 × 1,627 (492 KB) | Richstraka~commonswiki | {{Information |Description={{en|1=The subject of this image is a silicon integrated circuit wafer. At the center of the image is a light triangle. This triangle is a pyramid-shaped area of Al-Si alloy caused by high-temperature processing (450°C annealin |
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Orientation | Normal |
---|---|
Horizontal resolution | 600 dpi |
Vertical resolution | 600 dpi |
Software used | Adobe Photoshop CS4 Macintosh |
File change date and time | 18:15, 27 September 2009 |
Color space | Uncalibrated |
Image width | 2,161 px |
Image height | 1,627 px |
Unique ID of original document | adobe:docid:photoshop:bb38055b-ef92-11dc-b28f-bfbf7f054ee6 |
Date and time of digitizing | 16:47, 9 March 2008 |
Date metadata was last modified | 14:15, 27 September 2009 |
Copyright status | Copyright status not set |