Extreme ultraviolet lithography
Lithography using 13.5 nm UV light / From Wikipedia, the free encyclopedia
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Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a new technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses extreme ultraviolet (EUV) light to create intricate patterns on silicon wafers.
As of 2023[update], ASML Holding is the only company that produces and sells EUV systems for chip production, targeting 5 nanometer (nm) and 3 nm process nodes.
The EUV wavelengths that are used in EUVL are near 13.5 nanometers (nm), using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.[1]), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.
At the 2019 International Electron Devices Meeting (IEDM), TSMC reported use of EUV for its 5 nm node in contact, via, metal line, and cut layers, where the cuts can be applied to fins, gates or metal lines.[2][3]
At IEDM 2020, TSMC reported its 5 nm node minimum metal pitch to be reduced 30% (to ~28 nm) from that of its 7 nm node,[4] which was 40 nm.[5]
Samsung's 5 nm node is lithographically the same design rule as its 7 nm node, with a minimum metal pitch of 36 nm.[6]